| 摘要 |
<p>Provided in embodiments of the present invention are a graphite plate, a reaction chamber and a method for heating the substrate in a chemical vapor deposition process, wherein the graphite plate has a groove, the groove being located at a support corresponding thereto, and the support being used to suspend the substrate so that there exists no contact between the substrate and the graphite plate. By suspending the substrate so that the heating of the substrate via the graphite plate is accomplished mainly by heat radiation, the present invention improves the uniformity of heating the substrate, especially the substrate in which warp distortion has occurred, and the uniformity of the chemical vapor deposition process.</p> |
