NONVOLATILE MEMORY DEVICE AND THRESHOLD ADJUSTING METHOD OF GROUND SELECTION TRANSISTOR THEREOF

摘要

PURPOSE: A non-volatile memory device and a threshold voltage control method of a ground selection transistor thereof easily control a threshold voltage of the ground selection transistor by using the bias of a read operation. CONSTITUTION: An address decoder (130) generates a block selection signal by receiving an address. A block gating circuit (120) selects one of multiple memory blocks in response to the block selection signal. A control logic (150) controls a threshold voltage of one selected from first and second ground selection transistors by providing a first voltage to a gate of the first ground selection transistor among ground selection transistors and a second voltage to a gate of the second ground selection transistor among the ground selection transistors in a read operation.