发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit operable on a plurality of systems of power supplies which has an input circuit constructed by a standard CMOS process.SOLUTION: A P channel transistor 1 and an N channel transistor 2 comprising 1.2 V standard transistors, respectively, are interposed in series between a first power supply node (voltage VCC=1.2 V) and a second power supply node (voltage VSS=0 V), and a common connection node of respective drains is an output node for a signal OUT to be fed to an internal circuit. A gate of the P channel transistor 1 is directly fed with an external signal EXIN having an amplitude of 3 V. A gate of the N channel transistor 2 is, on the other hand, fed with the external signal EXIN via an N channel transistor 3 of single-sided high voltage structure and connected with a drain of an N channel transistor 4 having a gate and a source connected to the second power supply node.
申请公布号 JP2013168874(A) 申请公布日期 2013.08.29
申请号 JP20120031922 申请日期 2012.02.16
申请人 TOPPAN PRINTING CO LTD 发明人 ASANO MASAMICHI;SHIODOME SHUNSUKE;MATSUDA HIROYUKI;IMAI YASUNORI
分类号 H03K19/0185;H01L21/822;H01L21/8234;H01L27/04;H01L27/088 主分类号 H03K19/0185
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