发明名称 DUAL-STAGE TRAPPED-FLUX MAGNET CRYOSTAT FOR MEASUREMENTS AT HIGH MAGNETIC FIELDS
摘要 A method and a dual-stage trapped-flux magnet cryostat apparatus are provided for implementing enhanced measurements at high magnetic fields. The dual-stage trapped-flux magnet cryostat system includes a trapped-flux magnet (TFM). A sample, for example, a single crystal, is adjustably positioned proximate to the surface of the TFM, using a translation stage such that the distance between the sample and the surface is selectively adjusted. A cryostat is provided with a first separate thermal stage provided for cooling the TFM and with a second separate thermal stage provided for cooling sample.
申请公布号 US2013221958(A1) 申请公布日期 2013.08.29
申请号 US201213405436 申请日期 2012.02.27
申请人 ISLAM ZAHIRUL;DAS RITESH K.;WEINSTEIN ROY;UCHICAGO ARGONNE, LLC 发明人 ISLAM ZAHIRUL;DAS RITESH K.;WEINSTEIN ROY
分类号 G01R33/00 主分类号 G01R33/00
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