发明名称 |
METHODS OF PROVIDING THIN LAYERS OF CRYSTALLINE SEMICONDUCTOR MATERIAL, AND RELATED STRUCTURES AND DEVICES |
摘要 |
Methods of fabricating semiconductor devices include forming a metal silicide in a portion of a crystalline silicon layer, and etching the metal silicide using an etchant selective to the metal silicide relative to the crystalline silicon to provide a thin crystalline silicon layer. Silicon-on-insulator (SOI) substrates may be formed by providing a layer of crystalline silicon over a base substrate with a dielectric material between the layer of crystalline silicone and the base substrate, and thinning the layer of crystalline silicon by forming a metal silicide layer in a portion of the crystalline silicon, and then etching the metal silicide layer using an etchant selective to the metal silicide layer relative to the crystalline silicon. |
申请公布号 |
WO2013124719(A1) |
申请公布日期 |
2013.08.29 |
申请号 |
WO2013IB00139 |
申请日期 |
2013.02.01 |
申请人 |
SOITEC |
发明人 |
SADAKA, MARIAM;RADU, IONUT |
分类号 |
H01L21/306;H01L21/3213;H01L21/762 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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