| 摘要 |
PROBLEM TO BE SOLVED: To provide: a transistor which has favorable transistor characteristics and includes an oxide semiconductor; and a highly reliable semiconductor device which includes the transistor including the oxide semiconductor.SOLUTION: A semiconductor device includes a transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode are stacked in this order, where a sidewall insulating film is formed on side surfaces and a top surface of the gate electrode. The oxide semiconductor film is subjected to etching treatment so as to have a cross shape having different lengths in the channel length direction or to have a larger length than a source electrode and a drain electrode in the channel width direction. Further, the source electrode and the drain electrode are formed in contact with the oxide semiconductor film. |
