METHOD OF FABRICATING CMOS AND TRENCH DIODE IN SAME SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method of fabricating a CMOS and a trench diode in the same substrate which allows for fabrication of a CMOS circuit and a trench diode in the same substrate with high quality and high efficiency.SOLUTION: At least a part of a heat treatment process of about 30 minutes or longer for fabricating a CMOS at about 800°C or higher, and at least a part of a heat treatment process of about 30 minutes or longer for fabricating a trench diode at about 800°C or higher are performed substantially simultaneously. Alternatively, a diffusion prevention film 3 for preventing occurrence of diffusion up to the CMOS formation region of a substrate 1 when diffusing dopant to the inner wall of a trench 6 is formed previously in a process before formation of the trench 6 in the substrate 1 and after ion implantation for forming a P-well 8 and an N-well 9 in the substrate 1.