VERTICAL ORGANIC LIGHT-EMITTING TRANSISTOR AND FABRICATION METHOD THEREOF

摘要

PURPOSE: A vertical organic light emitting transistor and a manufacturing method thereof are provided to increase the rate of an effective light emitting region by forming a plurality of holes having a gap of a nano unit on a source electrode layer. CONSTITUTION: A gate electrode layer (20) is placed on the upper part of a substrate. A first insulating layer (30) is placed on the upper part of the gate electrode. A source electrode layer (40) is placed on the insulating layer and includes a plurality of holes having a gap of a nano unit. A second insulating layer (50) is placed on the upper part of the source electrode layer except for the multiple holes. An organic light emitting layer (60) covers the second insulating layer by filling the plurality of holes.