BLOCK COPOLYMER AND METHOD RELATING THERETO

摘要

PROBLEM TO BE SOLVED: To provide a new self-assembled block copolymer that enables patterning on intermediate length scales (e.g., 20 to 40 nm) and that exhibits a quick annealing profile with low defect formation.SOLUTION: A copolymer composition including a block copolymer having a poly(methyl methacrylate) (PMMA) block and a poly((trimethylsilyl)methyl methacrylate) (PTMSMMA) block is provided, wherein the block copolymer exhibits a number-average molecular weight (M) of 1 to 1,000 kg/mol and, wherein the block copolymer exhibits a polydispersity (PD) of 1 to 2. Also films and substrates treated with the copolymer composition are provided. The block copolymer further exhibits a film pitch (L0) of 10 to 100 nm. A method includes: applying the film to the substrate; annealing the film; and treating the annealed film so as to remove the PMMA and to convert the PTMSMMA to SiOx.