| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor which reduces the number of manufacturing processes and achieves low costs and high productivity, which has good electric characteristics and achieves high reliability, and to achieve high performance, high reliability, and high productivity in a semiconductor device including the transistor.SOLUTION: A transistor is formed in at least two photolithography processes, i.e., a photolithography process, in which a photolithography process for forming an island-like semiconductor layer is omitted and a gate electrode (including wiring etc. formed on the same layer) is formed, and a photolithography process where a source electrode and a drain electrode (including wiring etc. formed on the same layer) are formed. Utilization of electron beam exposure allows the transistor having a short distance (a channel length) between the source electrode and the drain electrode to be formed. For example, the transistor having the channel length shorter than 50 nm is realized. |
