发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To re-join a conductive fuse blown by laser trimming with a plating electrode in a plating process and prevent a plating liquid etc. from penetrating into a fuse blown part.SOLUTION: A second protection layer 11 covering a trimming element formation region 70 is formed at a semiconductor device 1 formed by a multilayer wiring structure and having a fuse blown groove 10a, formed by a conductive fuse 10 being blown by laser trimming, in a trimming element formation region 70. Then, a plating electrode 12 is formed at an exterior lead-out pad 7 formed by a top layer metal wiring. Subsequently, a third protection layer 13, which has an opening and covers the semiconductor substrate 1 including the second protection layer 11, is formed on the plating electrode 12.
申请公布号 JP2013168491(A) 申请公布日期 2013.08.29
申请号 JP20120030606 申请日期 2012.02.15
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES LLC 发明人 KUROSE EIJI
分类号 H01L21/82;H01L21/312;H01L21/316;H01L21/318;H01L21/3205;H01L21/768;H01L21/822;H01L23/522;H01L27/04 主分类号 H01L21/82
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