发明名称 |
METHOD FOR MANUFACTURING N-TYPE SiC SINGLE CRYSTAL |
摘要 |
A method for manufacturing an n-type SiC single crystal, enables the suppression of the variation in nitrogen concentration among a plurality of n-type SiC single crystal ingots manufactured. A method includes the steps of: providing a manufacturing apparatus (100) including a chamber (1) having an area in which a crucible (7) is to be disposed; heating the area in which the crucible (7) is to be disposed and evacuating the gas in the chamber (1); filling, after the evacuation, the chamber (1) with a mixed gas containing a noble gas and nitrogen gas; heating and melting a starting material housed in the crucible (7) disposed in the area to produce a SiC solution (8) containing silicon and carbon; and immersing a SiC seed crystal into the SiC solution under the mixed gas atmosphere to grow an n-type SiC single crystal on the SiC seed crystal.
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申请公布号 |
US2013220212(A1) |
申请公布日期 |
2013.08.29 |
申请号 |
US201113883350 |
申请日期 |
2011.11.04 |
申请人 |
KUSUNOKI KAZUHIKO;KAMEI KAZUHITO;YASHIRO NOBUYOSHI;MORIGUCHI KOUJI;OKADA NOBUCHIRO;DANNO KATSUNORI;DAIKOKU HIRONORI;TOYOTA JIDOSHA KABUSHIKI KAISHA;NIPPON STEEL & SUMITOMO METAL CORPORATION |
发明人 |
KUSUNOKI KAZUHIKO;KAMEI KAZUHITO;YASHIRO NOBUYOSHI;MORIGUCHI KOUJI;OKADA NOBUCHIRO;DANNO KATSUNORI;DAIKOKU HIRONORI |
分类号 |
C30B15/20;C30B15/10;C30B15/30;C30B15/36 |
主分类号 |
C30B15/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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