发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A semiconductor chip SC includes an electrode pad PAD. A Cu pillar PIL is formed on the electrode pad PAD. In addition, an interconnect substrate INT includes a connection terminal TER. The connection terminal TER contains Cu. For example, the connection terminal TER is formed of Cu, and is formed, for example, in a land shape. However, the connection terminal TER may not be formed in a land shape. The Cu pillar PIL and the connection terminal TER are connected to each other through a solder layer SOL. The solder layer SOL contains Sn. A Ni layer NIL is formed on either the Cu pillar PIL or the connection terminal TER. The minimum value L of the thickness of the solder layer SOL is equal to or less than 20 mum.
申请公布号 US2013221520(A1) 申请公布日期 2013.08.29
申请号 US201313781496 申请日期 2013.02.28
申请人 RENESAS ELECTRONICS CORPORATION;RENESAS ELECTRONICS CORPORATION 发明人 UNO SATOSHI;TSUCHIYA HIDEAKI;YOKOGAWA SHINJI
分类号 H01L21/768;H01L23/498 主分类号 H01L21/768
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