| 摘要 |
<p>Provided is a method for heating a layer containing nickel and titanium on an SiC substrate (1) to form a nickel silicide layer (4) containing titanium carbide, wherein the layer containing nickel and titanium is formed by vapor deposition or sputtering, and the nickel silicide layer (4) is produced by heating at 1100ºC-1350ºC inclusive. During the process, the rate of temperature increase is 10ºC/minute-1350ºC/minute inclusive, and the hold time for heating is 0-120 minutes inclusive. Through these heating conditions, there can be obtained a backside electrode (8) for an SiC semiconductor device, having uniformity and sufficiently low backside contact resistance.</p> |
