发明名称 GAS SUPPLY PIPE UNIT FOR PLASMA TREATMENT AND FILM DEPOSITION METHOD USING THE SAME
摘要 PROBLEM TO BE SOLVED: To propose a gas supply pipe unit having structure: which, when repeatedly forming a film on the inner surface of a vessel by a plasma CVD method, prevents such a situation that a large amount of reaction products adhere to a gas supply pipe and then the adhered film comes off, so that a piece of film that came off remains inside the vessel after deposition; which also achieves improvement, so that removing operation of the film unintentionally adhered to the adjacent to the gas supply pipe can be performed without causing interference with deposition operation; and which further prevents deformation of the target vessel to be deposited by cooling the gas supply pipe and the adjacent area thereof heated by heat generation of plasma.SOLUTION: This gas supply pipe unit includes: a gas supply pipe having a nozzle of gas blowing at the end which is inserted into the target vessel to be deposited; a cover of the gas supply pipe which removably covers the gas supply pipe; and an attachment nut of the gas supply pipe which is provided at the lower end of the cover of the gas supply pipe, connects the gas supply pipe to the cover of the gas supply pipe, and can introduce cooling gas into a gap between the gas supply pipe and the cover of the gas supply pipe.
申请公布号 JP2013167003(A) 申请公布日期 2013.08.29
申请号 JP20120031685 申请日期 2012.02.16
申请人 TOPPAN PRINTING CO LTD 发明人 KASHIMA HIROTO
分类号 C23C16/455;C23C16/50 主分类号 C23C16/455
代理机构 代理人
主权项
地址