发明名称 |
NITRIDE SEMICONDUCTOR LIGHT-EMITTING CHIP, NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CHIP |
摘要 |
A nitride semiconductor light-emitting chip (100) is provided with: a conductive substrate (104) having a nitride semiconductor layer; an n-type nitride semiconductor layer (105), an active layer (106), and a p-type nitride semiconductor layer (107) formed sequentially on the primary surface of the nitride semiconductor layer; and an n-side electrode (109) provided so as to contact the conductive substrate. The conductive substrate has a plurality of recessed portions (104a) formed in mutually separated positions on a rear side that is on the opposite side of the primary side. The n-side electrode contacts at least some of the front side of the recessed portions (104a). D1<=0.25T, where T is the thickness of the conductive substrate and D1 is the depth of the recessed portions. |
申请公布号 |
WO2013124924(A1) |
申请公布日期 |
2013.08.29 |
申请号 |
WO2012JP06754 |
申请日期 |
2012.10.22 |
申请人 |
PANASONIC CORPORATION |
发明人 |
INOUE, AKIRA;FUJITA, TOSHIYUKI;FUJIKANE, MASAKI;YOKOGAWA, TOSHIYA |
分类号 |
H01L33/38;H01L33/32 |
主分类号 |
H01L33/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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