发明名称 POLYCRYSTALLINE SILICON AND DEVICE FOR PRODUCING POLYCRYSTALLINE SILICON
摘要 <p>In the present invention, six gas nozzles (9) are disposed at hexagonally symmetric positions on an imaginary circle (S) having a center at the center of a substrate (5). Of the gas nozzles, four gas nozzles (9v) are vertical jetting nozzles of which the direction of the central vector of gas jetting is the direction perpendicular to the substrate (5), and two gas nozzles (9c) are oblique jetting nozzles of which the central vector of gas jetting has a component in the direction tangential to the imaginary circle (S). By means of the component in the direction tangential to the imaginary circle (S), the reaction gas supplied from the oblique jetting nozzles (9c) imparts rotational force to the circulation of reaction gas in a chamber (1), and the reaction gas forms a state of circulating as a whole while rotating within the chamber (1). Also, the state of mixture of the reaction gas becomes yet more favorable by means of the rotational component.</p>
申请公布号 WO2013125209(A1) 申请公布日期 2013.08.29
申请号 WO2013JP00894 申请日期 2013.02.19
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 KUROSAWA, YASUSHI;NETSU, SHIGEYOSHI
分类号 C01B33/035 主分类号 C01B33/035
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