| 摘要 |
A method for manufacturing a compound semiconductor substrate includes at least the processes of epitaxially growing a quaternary light emitting layer composed of AlGaInP on a GaAs substrate; vapor-phase growing a p-type GaP window layer on a first main surface of the quaternary light emitting layer, the first main surface being opposite to the GaAs substrate; removing the GaAs substrate; and epitaxially growing an n-type GaP window layer on a second main surface of the light emitting layer, the second main surface being located at a side where the GaAs substrate is removed. The method includes the process of performing a heat treatment under a hydrogen atmosphere containing ammonia after the process of removing the GaAs substrate and before the process of epitaxially growing the n-type GaP window layer. |
