发明名称 METHOD FOR MANUFACTURING THIN FILM OF SINGLE CRYSTAL SAPPHIRE FOR LED CHIP SUBSTRATE AND LED CHIP THEREBY
摘要 PURPOSE: A method for manufacturing a thin film of single crystal sapphire for an LED chip substrate and the LED chip thereby are provided to reduce production costs by minimizing loss due to a cutting process. CONSTITUTION: Aluminum of a thickness of 100-10000 nm is deposited on one surface of a quartz glass substrate (3). The deposited aluminum is locally heated. Oxygen (5) is in contact with the heated aluminum. Single crystal sapphire is formed by changing aluminum through an oxidation reaction. The single crystal sapphire formed by the oxidation reaction is slowly cooled.
申请公布号 KR101301197(B1) 申请公布日期 2013.08.28
申请号 KR20120124867 申请日期 2012.11.06
申请人 EP GLOBAL INC. 发明人 KIM HYUN JIN
分类号 H01L21/20;H01L21/02;H01L33/02 主分类号 H01L21/20
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