<p>The method involves introducing starting material into a plasma jet generated by a plasma generator (112) at a process pressure of 1000Pa in a process chamber. The starting material is composed of a metal or silicon oxide which is vaporized in the plasma jet. The metal or silicon is deposited in the form of nanopowder or of a film (124), after oxygen reduction process.</p>
申请公布号
EP2631025(A1)
申请公布日期
2013.08.28
申请号
EP20120156660
申请日期
2012.02.23
申请人
FORSCHUNGSZENTRUM JUELICH GMBH;SULZER METCO AG
发明人
HOSPACH, ANDREAS;VASSEN, ROBERT, PROF. DR.;MAUER, GEORG, DR.;RAUWALD, KARL-HEINZ;STOEVER, DETLEV, PROF. DR.;VON NIESSEN, KONSTANTIN, DR.;GINDRAT, MALKO, DR.