发明名称 An OMESFET with surround gate and manufacturing method.
摘要 Improved electroluminescent and photonic devices with integrated logic and control circuits are disclosed. Low mobility, contact barrier, space charge limitation and carrier balancing are provided solutions that increase efficiency, reliability and longevity of the devices. Device power loss and power requirements are reduced. True-ohmic contact materials allow a gate-controlled, light emitting organic triode MESFET configuration that eliminates commonly used ITO thereby increasing luminous output, and providing ease of address and control by integrally fabricated complementary MESFET address and control circuitry. The devices can be fabricated by printing or by weaving appropriate materials, and can be configured as color displays.
申请公布号 EP2423960(B1) 申请公布日期 2013.08.28
申请号 EP20110190401 申请日期 2002.03.28
申请人 SALONGA ACCESS LLC 发明人 CHRISTENSEN, ALTON O
分类号 H01L27/32;H01J1/62;H01L27/14;H01L29/76;H01L31/00;H01L31/0224;H01L31/18;H01L51/05;H01L51/10;H01L51/52;H05B33/00;H05B33/14 主分类号 H01L27/32
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