SUBSTRATE PLASMA PROCESSING APPARATUS

摘要

PURPOSE: A plasma processing apparatus for a substrate is provided to deliver more current from a pulsed DC power supply to a plasma electrode, thereby generating high-power plasma under a fixed pulsed voltage condition. CONSTITUTION: A plasma processing apparatus for a substrate (10) comprises a first electrode (120) maintaining the substrate arranged in a reaction chamber (110); a second electrode (140) disposed to face the first electrode in the reaction chamber; a power supply unit (150) configured to apply a DC pulse to the first electrode; and an impedance transformer (155) disposed between the power supply unit and the first electrode, and configured to include at least one resistor element.