发明名称
摘要 <p>It is an object of the present invention to manufacture, with high yield, semiconductor devices in each of which an element which has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-forming layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound over the separation layer, and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and after attaching a first flexible substrate over the second conductive layer, separating the separation layer and the element-forming layer at the separation layer.</p>
申请公布号 JP5272092(B2) 申请公布日期 2013.08.28
申请号 JP20120093976 申请日期 2012.04.17
申请人 发明人
分类号 H05B33/02;H01L21/28;H01L21/3205;H01L21/336;H01L21/768;H01L23/522;H01L27/10;H01L27/105;H01L27/28;H01L29/786;H01L29/788;H01L29/792;H01L45/00;H01L49/00;H01L51/05;H01L51/50;H05B33/22 主分类号 H05B33/02
代理机构 代理人
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