CMOS DEVICES AND METHOD FOR MANUFACTURING THE SAME

摘要

A complementary metal-oxide semiconductor (CMOS) device is disclosed. The CMOS device includes a substrate, a well region formed in the substrate, and a gate formed on the substrate. The CMOS device also includes a first region and a second region formed in the well region and arranged at two sides of the gate. Further, the CMOS device includes a first light-doped drain (LDD) region and a second LDD region formed in the well region and extending the first region and the second region, respectively, towards the gate. The CMOS device also includes a first doped layer formed in the first LDD region, and a conduction type of an ion doped in the first doped layer is opposite to a conduction type of an ion doped in the first LDD region.