发明名称
摘要 A wiring board provided with a silicon substrate including a through hole that communicates a first surface and a second surface of the silicon substrate. A capacitor is formed on an insulating film, which is applied to the silicon substrate, on the first surface and a wall surface defining the through hole. A capacitor part of the capacitor includes a first electrode, a dielectric layer, and a second electrode that are sequentially deposited on the insulating film on the first surface and the wall surface of the through hole. A penetration electrode is formed in the through hole covered by the first electrode, the dielectric layer, and the second electrode of the capacitor part.
申请公布号 JP5275401(B2) 申请公布日期 2013.08.28
申请号 JP20110092202 申请日期 2011.04.18
申请人 发明人
分类号 H01L23/12;H01L23/14;H01L23/32 主分类号 H01L23/12
代理机构 代理人
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