发明名称 TARGET FOR ARC PROCESSES
摘要 A target for the deposition of mixed crystal layers with at least two different metals on a substrate by means of arc vapor deposition (arc PVD), wherein the target includes at least two different metals. To produce mixed crystal layers which are as free as possible of macroparticles (droplets) according to the invention at least the metal with the lowest melting point is present in the target in a ceramic compound, namely as a metal oxide, metal carbide, metal nitride, metal carbonitride, metal oxynitride, metal oxycarbide, metal oxycarbonitride, metal boride, metal boronitride, metal borocarbide, metal borocarbonitride, metal borooxynitride, metal borooxocarbide, metal borooxocarbonitride, metal oxoboronitride, metal silicate or mixture thereof, and at least one metal different from the metal with the lowest melting point is present in the target in elemental (metallic) form.
申请公布号 EP2630270(A1) 申请公布日期 2013.08.28
申请号 EP20110776732 申请日期 2011.10.18
申请人 WALTER AG 发明人 SCHIER, VEIT
分类号 C23C14/08;C23C14/32 主分类号 C23C14/08
代理机构 代理人
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