发明名称 ANTI-FUSE CIRCUIT AND SEMICONDUCTOR DEVICE HAVING THE SAME
摘要 PURPOSE: An anti-fuse circuit and a semiconductor device including the same reduce power consumption by easily sensing an anti-fusing state. CONSTITUTION: An anti-fuse circuit includes an anti-fuse cell driving circuit and an anti-fuse cell array. The anti-fuse cell driving circuit generates a normal cell driving voltage and a vote cell driving voltage. The anti-fuse cell array is made of a plurality of unit anti-fuse cells (110). The unit anti-fuse cell includes a normal cell transistor (MN1) and a vote cell transistor (MN2) connected to each other in parallel and performs a fuse operation in response to the normal cell driving voltage and the vote cell driving voltage.
申请公布号 KR20130095554(A) 申请公布日期 2013.08.28
申请号 KR20120017091 申请日期 2012.02.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LIM, YOUNG IL;KIM, CHEOL;SHIN, SANG HO
分类号 G11C29/04 主分类号 G11C29/04
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