| 摘要 |
A method for manufacturing a complimentary field effect transistor comprising: providing a wafer comprising at least a buffer layer 202, a second barrier layer 203 and a first barrier layer 210; removing said first barrier layer 210 in at least a first area of the wafer; and forming n-type ohmic contacts 207,209 and Schottky contacts 208 in the first area and forming p-type ohmic contacts 204,206 and Schottky contacts 205 on the first barrier layer 210. Also disclosed is the device produced by the above method, wherein the buffer layer is a first AlGaN layer with a first aluminium composition, the second barrier layer is a second AlGaN layer with a second aluminium composition and first barrier layer is a GaN layer; where a first heterojunction 213 is formed between the two AlGaN layers, a second heterojunction 212 is formed between the second AlGaN 203 and GaN 210 layers; where a hole accumulation layer is present at the second heterojunction 212 and an electron accumulation layer is present at the first heterojunction 213. |
