| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of miniaturizing the constitution of the whole of a switching element when the switching element used in an environment of a large current is formed relative to a case where a switching element is formed by using a semiconductor device in the prior art. SOLUTION: This semiconductor device includes a plurality of sets of first and second semiconductor chips 13, 14, and is structured such that the surface sides of the first and second semiconductor chips 13, 14 are connected to an intermediate member 15, and the backsides thereof are connected to a first radiation member 16 or a second radiation member 17, or the surface sides are connected to the first radiation member 16 or the second radiation member 17, and connected to the first intermediate member 15, thereby a circuit is formed wherein a switching element 11 and a diode 12 formed in the first and second semiconductor chips 13, 14 of each set are connected in parallel to each other, and circuits each composed of the switching element 11 and the diode 12 formed in the first and second semiconductor chips 13, 14 of each set are connected in parallel to each other. COPYRIGHT: (C)2010,JPO&INPIT |
