| 摘要 |
<p>Although a method for obtaining filmy crystals of a chalcogen compound is to form a metal film made up of Cu, In and Ga and to subject the metal film to a selenization process, the method has problems with homogeneity or productivity of the film. Although a method of obtaining nanoparticles containing Cu-In-Ga-Se at low cost can obtain highly homogeneous filmy crystals of a chalcogen compound, this film has a high resistance value, and hence does not have satisfactory characteristics for use in a solar cell or the like. Chalcogen compound powder containing Cu-In-Ga-Se and having an average particle diameter (D SEM ) of 80 nm or less and a low content of carbon is obtained by forming a mixed solvent by mixing together at least any one of a mixture of copper salt and indium salt, a composite hydroxide of copper and indium, and a composite oxide of copper and indium, any one of selenium and a selenium compound, and a solvent having a boiling point of 250°C or less, and heating the mixed solvent to a temperature of 220°C to 500°C. A thin film containing Cu-In-Ga-Se and having low resistance is obtained by using paste of the chalcogen compound powder.</p> |
