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发明名称
Memory cell array comprising nanogap memory elements
摘要
申请公布号
EP2202797(A3)
申请公布日期
2013.08.28
申请号
EP20090179361
申请日期
2009.12.16
申请人
FUNAI ELECTRIC ADVANCED APPLIED TECHNOLOGY RESEARCH INSTITUTE INC.;FUNAI ELECTRIC CO., LTD.
发明人
TAKAHASHI, TSUYOSHI;HAYASHI, YUTAKA;MASUDA, YUICHIRO;FURUTA, SHIGEO;ONO, MASATOSHI
分类号
H01L27/24;G11C13/00;G11C13/02
主分类号
H01L27/24
代理机构
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