发明名称 |
RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN |
摘要 |
<p>PURPOSE: A resist composition and a method for forming a resist pattern are provided to improve the resolution and lithography characteristics. CONSTITUTION: A resist composition contains a base component (A) which generates acid upon exposure and shows changed solubility in a developing solution under action of acid and an organic solvent component (S). The base component contains a resin component (A0) comprising a structural unit (a0) which generates acid. The organic solvent component contains an organic solvent component (S1) comprising a compound represented by general formula (s-1). A method for forming a resist pattern comprises the steps of: forming a resist film on a supporter by using the resist composition; exposing the resist film; and developing the resist film to form the resist pattern.</p> |
申请公布号 |
KR20130095219(A) |
申请公布日期 |
2013.08.27 |
申请号 |
KR20130015569 |
申请日期 |
2013.02.13 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
MATSUZAWA KENSUKE |
分类号 |
G03F7/004;G03F7/028;G03F7/26 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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