发明名称 |
Method of providing a semiconductor structure with forming a sacrificial structure |
摘要 |
A method for providing a semiconductor structure includes forming a sacrificial structure by etching a plurality of trenches from a first main surface of a substrate. The method further includes covering the plurality of trenches at the first main surface with a cover material to define cavities within the substrate, removing a part of the substrate from a second main surface opposite to the first main surface to a depth at which the plurality of trenches are present, and etching away the sacrificial structure from the second main surface of the substrate.
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申请公布号 |
US8518732(B2) |
申请公布日期 |
2013.08.27 |
申请号 |
US20100976433 |
申请日期 |
2010.12.22 |
申请人 |
KAUTZSCH THORALF;KOLB STEFAN;BINDER BORIS;FOESTE BERND;MUELLER MARCO;INFINEON TECHNOLOGIES AG |
发明人 |
KAUTZSCH THORALF;KOLB STEFAN;BINDER BORIS;FOESTE BERND;MUELLER MARCO |
分类号 |
H01L21/00;H01L21/311 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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