发明名称 Structure, structure and method of latch-up immunity for high and low voltage integrated circuits
摘要 Design structures, structures and methods of manufacturing structures for providing latch-up immunity for mixed voltage integrated circuits. The structure includes a diffused N-Tub structure embedded in a P-wafer and provided below a retrograde N-well to a non-isolated CMOS logic.
申请公布号 US8519402(B2) 申请公布日期 2013.08.27
申请号 US20080183462 申请日期 2008.07.31
申请人 VOLDMAN STEVEN H.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 VOLDMAN STEVEN H.
分类号 H01L27/108 主分类号 H01L27/108
代理机构 代理人
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