| 摘要 |
<p>A method for fabricating a thin film transistor and an etching solution composition used for the same are provided to prevent the generation of an etching residue, thereby reducing a risk of electric short or wiring fault. A thin film transistor comprises a semiconductor layer(110), a gate insulating layer(115), a gate electrode(120), an interlayer insulating film(125) and a source/drain electrode(130). The gate electrode comprises copper or a copper alloy film. The source/drain electrode comprises copper or the copper alloy film. The gate electrode and the source/drain electrode are formed by an etching solution of the copper or the copper alloy film. The etching solution composition is composed of 1-20wt% of inorganic salt oxidizer, 1-10wt% of inorganic acid, 0.1-5wt% of phosphate and deionized water.</p> |
