发明名称 Blocking memory readback in a programmable logic device
摘要 A programmable logic device (PLD) is provided that includes: a configuration memory including a plurality of memory cells arranged according to rows and columns, wherein a subset of the rows are RAM rows, and wherein a subset of the columns in each RAM row are RAM columns and at least one column in each RAM row is a flag bit column, the memory cells corresponding to the flag bit column and RAM rows operable to store flag bit signals; a soft error detection (SED) circuit operable to read the configuration memory to derive a checksum; a logic circuit to determine if a RAM row is being read by the SED circuit that includes an asserted flag bit; and a blocking circuit that provides a known logical value to the SED circuit responsive to the logic circuit to block readback of the memory cells corresponding to the RAM rows and RAM columns.
申请公布号 US8522126(B1) 申请公布日期 2013.08.27
申请号 US20100977011 申请日期 2010.12.22
申请人 CHEN ZHENG;SOOD ROHITH;MCLAURY LOREN;LATTICE SEMICONDUCTOR CORPORATION 发明人 CHEN ZHENG;SOOD ROHITH;MCLAURY LOREN
分类号 G06F11/10 主分类号 G06F11/10
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