发明名称 |
Schottky diodes having metal gate electrodes and methods of formation thereof |
摘要 |
In one embodiment, the semiconductor device includes a first doped region disposed in a first region of a substrate. A first metal electrode having a first portion of a metal layer is disposed over and contacts the first doped region. A second doped region is disposed in a second region of the substrate. A dielectric layer is disposed on the second doped region. A second metal electrode having a second portion of the metal layer is disposed over the dielectric layer. The second metal electrode is capacitively coupled to the second doped region.
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申请公布号 |
US8518811(B2) |
申请公布日期 |
2013.08.27 |
申请号 |
US201113082793 |
申请日期 |
2011.04.08 |
申请人 |
RIESS PHILIPP;SIPRAK DOMAGOJ;INFINEON TECHNOLOGIES AG |
发明人 |
RIESS PHILIPP;SIPRAK DOMAGOJ |
分类号 |
H01L21/312 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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