| 摘要 |
<p>PURPOSE: A substrate processing apparatus and a method for manufacturing a semiconductor device are provided to prevent the oxidation of a substrate by supplying reduction gas to the back surface of a wafer. CONSTITUTION: A gas supply part supplies gas into a process chamber. A heating part heats a substrate. An excitation part excites the gas in the process chamber. An exhaust part ventilates the process chamber. A control part controls the gas supply part, the excitation part, and the exhaust unit.</p> |
