Method of manufacturing semiconductor device

摘要

The reliability of the semiconductor device which has the structure which stores a plurality of semiconductor chips with which plane sizes differ in the same sealing body in the state where they are accumulated via the insulating film which has adhesive property is improved. In the semiconductor device which has the structure which stores a plurality of semiconductor chips with which plane sizes differ in the same sealing body in the state where they are accumulated via DAF, thickness of DAF of the back surface of the uppermost semiconductor chip with which the control circuit was formed was made thicker than each of DAF of the back surface of the lower layer semiconductor chip with which the memory circuit was formed. Hereby, the defect that the bonding wire which connects the uppermost semiconductor chip and a wiring substrate contacts the main surface corner part of a lower layer semiconductor chip can be reduced.