发明名称 Solid-state imaging device with improved dynamic range
摘要 According to one embodiment, a solid-state imaging device includes a photoelectric conversion section, first circuit, second circuit, and third circuit. The photoelectric conversion section generates signal charge corresponding to the intensity of the irradiation light. The first circuit reads the signal charge generated by the photoelectric conversion section. The second circuit detects that the signal charge in the photoelectric conversion section has overflowed. The third circuit produces a signal corresponding to the time elapsed from the start of generation of the signal charge in the photoelectric conversion section, and holds and reads the signal at a timing at which the overflow has been detected by the second circuit.
申请公布号 US8520106(B2) 申请公布日期 2013.08.27
申请号 US20100792241 申请日期 2010.06.02
申请人 MASHIYAMA HIROSHI;AKABANE SATOSHI;KABUSHIKI KAISHA TOSHIBA 发明人 MASHIYAMA HIROSHI;AKABANE SATOSHI
分类号 H04N3/14;H04N5/335;H04N5/341;H04N5/353;H04N5/355;H04N5/369;H04N5/372;H04N5/374;H04N5/378 主分类号 H04N3/14
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