| 摘要 |
A method includes simulating a first design of a semiconductor memory that includes at least one device disposed between and coupled to a memory bit cell and to a power supply line, determining if at least one simulated operational value of the semiconductor memory is above a threshold value, and adjusting at least one of a size of the device or a type of the device if the at least one simulated operational value is below the threshold value. The memory bit cell is disposed in a column including a plurality of bit cells. The size or type of the device is repeatedly adjusted and the design of the semiconductor memory is repeatedly simulated until the at least one simulated operational value is at or above the threshold value.
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