发明名称 |
Polishing pad, method of producing the same and method of producing semiconductor device by using the same |
摘要 |
The present invention provides a polishing pad used for planarizing inter layer dielectrics and the like by CMP (chemical mechanical polishing) in the manufacturing process of a semiconductor device, a method of producing the polishing pad and a method of producing a semiconductor device by using the polishing pad. The present invention relates to a semiconductor wafer polishing pad having grooves in a polishing surface and formed from a foamed polyurethane, wherein a processed surface of the groove comprising a side surface and a bottom surface has a surface roughness Ra of not more than 10.
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申请公布号 |
US8517798(B2) |
申请公布日期 |
2013.08.27 |
申请号 |
US201213615065 |
申请日期 |
2012.09.13 |
申请人 |
KIMURA TSUYOSHI;NAKAI YOSHIYUKI;WATANABE MASAHIRO;TOYO TIRE & RUBBER CO., LTD. |
发明人 |
KIMURA TSUYOSHI;NAKAI YOSHIYUKI;WATANABE MASAHIRO |
分类号 |
B24B49/00;B23B5/00;B23B5/46;B24B37/20;H01L21/304 |
主分类号 |
B24B49/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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