发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
An object of one embodiment of the present invention is to provide an antifuse which has low writing voltage. The antifuse is used for a memory element for a read only memory device. The antifuse includes a first conductive layer, an insulating layer, a semiconductor layer, and a second conductive layer. The insulating layer included in the antifuse is a silicon oxynitride layer formed by adding ammonia to a source gas. When hydrogen is contained in the layer at greater than or equal to 1.2×1021 atoms/cm3 and less than or equal to 3.4×1021 atoms/cm3 or nitrogen is contained in the layer at greater than or equal to 3.2×1020 atoms/cm3 and less than or equal to 2.2×1021 atoms/cm3, writing can be performed at low voltage.
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申请公布号 |
US8519509(B2) |
申请公布日期 |
2013.08.27 |
申请号 |
US201113082468 |
申请日期 |
2011.04.08 |
申请人 |
NODA KOSEI;YASUMOTO SEIJI;YOSHIZUMI KENSUKE;MIYAMOTO TOSHIYUKI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
NODA KOSEI;YASUMOTO SEIJI;YOSHIZUMI KENSUKE;MIYAMOTO TOSHIYUKI |
分类号 |
H01L29/00;H01L27/10;H01L29/04;H01L31/036 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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