Trench MOSFET with trenched floating gates and trenched channel stop gates in termination

摘要

A trench MOSFET comprising multiple trenched floating gates in termination area is disclosed. The multiple trenched floating gates have trench depth equal to or deeper than body junction of body regions in active area. The trench MOSFET further comprises at least one trenched channel stop gate around outside of the trenched floating gates and connected to at least one sawing trenched gate extended into scribe line for prevention of leakage path formation between drain and source regions.