发明名称 |
Thin-film transistor based piezoelectric strain sensor and method |
摘要 |
A piezoelectric strain sensor and method thereof for detecting strain, vibration, and/or pressure. The sensor incorporates a sequence of piezoelectric and semiconductor layers in a thin-film transistor structure. The thin-film transistor structure can be configured on a flexible substrate via a low-cost fabrication technique. The piezoelectric layer generates an electric charge resulting in a modulation of a transistor current, which is a measure of external strain. The sensor can be formed as a single gate field-effect piezoelectric sensor and a dual gate field-effect piezoelectric sensor. The semiconductor layer can be configured from a nanowire array resulting in a metal-piezoelectric-nanowire field effect transistor. The single and dual gate field-effect piezoelectric sensor offer increased sensitivity and device control due to the presence of the piezoelectric layer in the transistor structure and low cost manufacturability on large area flexible substrates.
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申请公布号 |
US8519449(B2) |
申请公布日期 |
2013.08.27 |
申请号 |
US20100842298 |
申请日期 |
2010.07.23 |
申请人 |
DUMITRU VIOREL-GEORGEL;COBIANU CORNEL;COSTEA STEFAN-DAN;SERBAN BOGDAN-CATALIN;HONEYWELL INTERNATIONAL INC. |
发明人 |
DUMITRU VIOREL-GEORGEL;COBIANU CORNEL;COSTEA STEFAN-DAN;SERBAN BOGDAN-CATALIN |
分类号 |
H01L29/84 |
主分类号 |
H01L29/84 |
代理机构 |
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代理人 |
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地址 |
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