发明名称 |
Poly profile engineering to modulate spacer induced stress for device enhancement |
摘要 |
The present invention provides a method of inducing stress in a semiconductor device substrate by applying an ion implantation to a gate region before a source/drain annealing process. The source/drain region may then be annealed along with the gate which will cause the gate to expand in certain areas due to said ion implantation. As a result, stress caused by said expansion of the gate is transferred to the channel region in the semiconductor substrate.
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申请公布号 |
US8519445(B2) |
申请公布日期 |
2013.08.27 |
申请号 |
US201113182455 |
申请日期 |
2011.07.14 |
申请人 |
HO VINCENT;LIN WENHE;TEH YOUNG WAY;SIEW YONG KONG;ZHANG BEI CHAO;ZHANG FAN;SHENG HAIFENG;TAN JUAN BOON;GLOBALFOUNDRIES SINGAPORE PTE. LTD. |
发明人 |
HO VINCENT;LIN WENHE;TEH YOUNG WAY;SIEW YONG KONG;ZHANG BEI CHAO;ZHANG FAN;SHENG HAIFENG;TAN JUAN BOON |
分类号 |
H01L27/10;H01L21/8238 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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