发明名称 Air through-silicon via structure
摘要 A silicon substrate has a conductive via extending from a first surface of the silicon substrate through the silicon substrate to a second surface of the silicon substrate. A dielectric via extends from the second surface of the silicon substrate toward the first surface of the silicon substrate.
申请公布号 US8519542(B2) 申请公布日期 2013.08.27
申请号 US20100849181 申请日期 2010.08.03
申请人 KIM NAMHOON;KIM DONG W.;WU PAUL Y.;XILINX, INC. 发明人 KIM NAMHOON;KIM DONG W.;WU PAUL Y.
分类号 H01L23/52 主分类号 H01L23/52
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