发明名称 |
Air through-silicon via structure |
摘要 |
A silicon substrate has a conductive via extending from a first surface of the silicon substrate through the silicon substrate to a second surface of the silicon substrate. A dielectric via extends from the second surface of the silicon substrate toward the first surface of the silicon substrate.
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申请公布号 |
US8519542(B2) |
申请公布日期 |
2013.08.27 |
申请号 |
US20100849181 |
申请日期 |
2010.08.03 |
申请人 |
KIM NAMHOON;KIM DONG W.;WU PAUL Y.;XILINX, INC. |
发明人 |
KIM NAMHOON;KIM DONG W.;WU PAUL Y. |
分类号 |
H01L23/52 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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