发明名称 Magnetoresistive element and magnetic memory
摘要 A magnetoresistive element according to an embodiment includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, at least one of the first magnetic layer and the second magnetic layer including a magnetic film of MnxAlyGez (10 atm %@x@44 atm %, 10 atm %@y@65 atm %, 10 atm %@z@80 atm %, x+y+z=100 atm %).
申请公布号 US8520433(B1) 申请公布日期 2013.08.27
申请号 US201213623405 申请日期 2012.09.20
申请人 KATO YUSHI;DAIBOU TADAOMI;KITAGAWA EIJI;KUBOTA TAKAHIDE;MIZUKAMI SHIGEMI;MIYAZAKI TERUNOBU;KABUSHIKI KAISHA TOSHIBA;TOHOKU UNIVERSITY 发明人 KATO YUSHI;DAIBOU TADAOMI;KITAGAWA EIJI;KUBOTA TAKAHIDE;MIZUKAMI SHIGEMI;MIYAZAKI TERUNOBU
分类号 G11C11/14 主分类号 G11C11/14
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