发明名称 |
Polishing composition and polishing method using the same |
摘要 |
The present invention provides a polishing composition that can be suitably used in polishing of polysilicon, and a polishing method using the polishing composition. The polishing composition contains abrasive grains and an anionic surfactant having a monooxyethylene group or a polyoxyethylene group and has a pH of 9 to 12. If the anionic surfactant contained in the polishing composition has a polyoxyethylene group, the number of repeating oxyethylene units in the polyoxyethylene group is preferably 2 to 8. The anionic surfactant contained in the polishing composition can be an anionic surfactant that has a phosphate group, a carboxy group, or a sulfo group as well as a monooxyethylene group or a polyoxyethylene group. The content of the anionic surfactant in the polishing composition is preferably 20 to 500 ppm.
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申请公布号 |
US8518297(B2) |
申请公布日期 |
2013.08.27 |
申请号 |
US20090362991 |
申请日期 |
2009.01.30 |
申请人 |
SHIMIZU MIKIKAZU;AKATSUKA TOMOHIKO;SUMITA KAZUYA;FUJIMI INCORPORATED |
发明人 |
SHIMIZU MIKIKAZU;AKATSUKA TOMOHIKO;SUMITA KAZUYA |
分类号 |
C09K13/06;B24B37/00;C09K3/14;H01L21/304 |
主分类号 |
C09K13/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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