发明名称 Polishing composition and polishing method using the same
摘要 The present invention provides a polishing composition that can be suitably used in polishing of polysilicon, and a polishing method using the polishing composition. The polishing composition contains abrasive grains and an anionic surfactant having a monooxyethylene group or a polyoxyethylene group and has a pH of 9 to 12. If the anionic surfactant contained in the polishing composition has a polyoxyethylene group, the number of repeating oxyethylene units in the polyoxyethylene group is preferably 2 to 8. The anionic surfactant contained in the polishing composition can be an anionic surfactant that has a phosphate group, a carboxy group, or a sulfo group as well as a monooxyethylene group or a polyoxyethylene group. The content of the anionic surfactant in the polishing composition is preferably 20 to 500 ppm.
申请公布号 US8518297(B2) 申请公布日期 2013.08.27
申请号 US20090362991 申请日期 2009.01.30
申请人 SHIMIZU MIKIKAZU;AKATSUKA TOMOHIKO;SUMITA KAZUYA;FUJIMI INCORPORATED 发明人 SHIMIZU MIKIKAZU;AKATSUKA TOMOHIKO;SUMITA KAZUYA
分类号 C09K13/06;B24B37/00;C09K3/14;H01L21/304 主分类号 C09K13/06
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