发明名称 |
Semiconductor device with junction field-effect transistor and manufacturing method of the same |
摘要 |
A semiconductor device with a JFET is disclosed. The semiconductor device includes a trench and a contact embedded layer formed in the trench. A gate wire is connected to the contact embedded layer, so that the gate wire is connected to an embedded gate layer via the contact embedded layer. In this configuration, it is possible to downsize a contact structure between the embedded gate layer and the gate wire.
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申请公布号 |
US8519452(B2) |
申请公布日期 |
2013.08.27 |
申请号 |
US201113248173 |
申请日期 |
2011.09.29 |
申请人 |
MALHAN RAJESH KUMAR;DENSO CORPORATION |
发明人 |
MALHAN RAJESH KUMAR |
分类号 |
H01L29/812;H01L21/337;H01L29/768 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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